none 10.1039/D2CP01254E Royal Society of Chemistry (RSC) The Royal Society of Chemistry 292 137381405 3453 20220608132149 10.1039 2024-04-17T19:57:18Z 2022-05-20T13:41:40Z 10 Physical Chemistry Chemical Physics Phys. Chem. Chem. Phys. 1463-9076 1463-9084 PPCPFQ 06 08 2022 24 22 Archit Dhingra Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska-Lincoln, 855 N 16th Street, Lincoln, Nebraska 68588-0299, USA http://orcid.org/0000-0001-9352-4361 Alexey Lipatov Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA Department of Chemistry, Biology & Health Sciences and Karen M. Swindler Department of Chemical and Biological Engineering, South Dakota School of Mines and Technology, 501 E. Saint Joseph St., Rapid City, SD 57701, USA http://orcid.org/0000-0001-5043-1616 Michael J. Loes Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA Jehad Abourahma Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA Maren Pink Department of Chemistry, Indiana University, 800 E. Kirkwood Ave., Bloomington, IN 47405-7102, USA Alexander Sinitskii Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA http://orcid.org/0000-0002-8688-3451 Peter A. Dowben Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska-Lincoln, 855 N 16th Street, Lincoln, Nebraska 68588-0299, USA http://orcid.org/0000-0002-2198-4710 N-type HfS 3 in vacuo (left) versus p-type HfS 3 in air (right); O 2 chemisorption changes the n-type E F to p-type E F . X-ray photoemission spectroscopy (XPS) has been used to examine the interaction between Au and HfS 3 at the Au/HfS 3 interface. XPS measurements reveal dissociative chemisorption of O 2 , leading to the formation of an oxide of Hf at the surface of HfS 3 . This surface hafnium oxide, along with the weakly chemisorbed molecular species, such as O 2 and H 2 O, are likely responsible for the observed p-type characteristics of HfS 3 reported elsewhere. HfS 3 devices exhibit n-type behaviour if measured in vacuum but turn p-type in air. Au thickness-dependent XPS measurements provide clear evidence of band bending as the S 2p and Hf 4f core-level peak binding energies for Au/HfS 3 are found to be shifted to higher binding energies. This band bending implies formation of a Schottky-barrier at the Au/HfS 3 interface, which explains the low measured charge carrier mobilities of HfS 3 -based devices. The transistor measurements presented herein also indicate the existence of a Schottky barrier, consistent with the XPS core-level binding energy shifts, and show that the bulk of HfS 3 is n-type. 2022 14016 14021 1 10.1039/rsc_crossmark_policy rsc.org true National Science Foundation https://doi.org/10.13039/100000001 1849206 ECCS-2025298 OIA-2044049 http://rsc.li/journals-terms-of-use#chorus 10.1039/D2CP01254E 20220608132149 https://xlink.rsc.org/?DOI=D2CP01254E http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP01254E http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP01254E Acta Chem. Scand. Furuseth 29 1975 10.3891/acta.chem.scand.29a-0623 623 J. Mater. Sci. Srivastava 27 1992 10.1007/BF00545445 3693 Wiley Interdiscip. Rev.: Comput. Mol. Sci. Dai 6 2016 211 Adv. Mater. Island 27 2015 10.1002/adma.201405632 2595 ACS Nano Lipatov 12 2018 10.1021/acsnano.8b07703 12713 Angew. Chem., Int. Ed. 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